Controlled carrier mean free path for the enhanced efficiency of III-nitride deep-ultraviolet light-emitting diodes

摘要

Electron overflowfromthe active region confines the AlGaNdeep-ultraviolet (UV) light-emitting diode (LED) performance. This paper proposes a novel approach to mitigate the electron leakage problem in AlGaN deep-UV LEDs using concave quantum barrier (QB) structures. The proposed QBs suppress the electron leakage by significantly reducing the electron mean free path that improves the electron capturing capability in the active region. Overall, such an engineered structure also enhances the hole injection into the active region, thereby enhancing the radiative recombination in the quantum wells. As a result, our study shows that the proposed structure exhibits an optical power of 9.16mWat similar to 284 nm wavelength, which is boosted by similar to 40.5% compared to conventional AlGaNUV LEDoperating at 60mAinjection current. (C) 2021 Optical Society of America