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Heterogeneous integration of InP and Si3N4 waveguides based on interlayer coupling for an integrated optical gyroscope

机译:基于集成光学陀螺夹层耦合的INP和Si3N4波导的异构集成

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摘要

In this study, we demonstrate a novel, to the best of our knowledge, integrated indium phosphide (InP) and silicon nitride (Si3N4) waveguide platform, which is based on interlayer coupling, to achieve heterogeneous integration of a photodetector and waveguide ring resonator firstly. In order to improve the gyro bias stability, the Si3N4 and InP waveguides were designed with a high polarization extinction ratio and ultra-low loss. Three-dimensional finite difference time domain methods are used to optimize the InP taper dimensions to provide efficient optical coupling between the Si3N4 and InP waveguides. The optical coupler with a length of 100 mu m is designed to achieve optical coupling between the Si3N4 and InP waveguides while maintaining its state of polarization all the way from the taper waveguides. The coupling efficiency of the optimized interlayer coupler has been improved to about 99.5%. (C) 2021 Optical Society of America
机译:在本研究中,我们展示了一种基于层间耦合的新型集成磷化铟(InP)和氮化硅(Si3N4)波导平台,首次实现了光电探测器和波导环形谐振器的异质集成。为了提高陀螺偏置稳定性,设计了高偏振消光比、超低损耗的Si3N4和InP波导。采用三维时域有限差分法优化InP的锥形尺寸,以在Si3N4和InP波导之间提供有效的光耦合。长度为100μm的光耦合器设计用于实现Si3N4和InP波导之间的光耦合,同时从锥形波导一直保持其偏振状态。优化后的层间耦合器的耦合效率提高到99.5%左右。(2021)美国光学学会

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  • 来源
    《Applied optics》 |2021年第3期|共8页
  • 作者单位

    Chinese Acad Sci Engn Res Ctr Semicond Integrated Technol Inst Semicond Beijing 100083 Peoples R China;

    Chinese Acad Sci Ctr Mat Sci &

    Optoelect Engn Beijing 100083 Peoples R China;

    Univ Sci &

    Technol China Hefei 230026 Peoples R China;

    Chinese Acad Sci Engn Res Ctr Semicond Integrated Technol Inst Semicond Beijing 100083 Peoples R China;

    Chinese Acad Sci Engn Res Ctr Semicond Integrated Technol Inst Semicond Beijing 100083 Peoples R China;

    Chinese Acad Sci Engn Res Ctr Semicond Integrated Technol Inst Semicond Beijing 100083 Peoples R China;

    Chinese Acad Sci Engn Res Ctr Semicond Integrated Technol Inst Semicond Beijing 100083 Peoples R China;

    Chinese Acad Sci Engn Res Ctr Semicond Integrated Technol Inst Semicond Beijing 100083 Peoples R China;

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  • 正文语种 eng
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