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首页> 外文期刊>Angewandte Chemie >Overcoming the Anisotropic Growth Limitations of Free-Standing Single-Crystal Halide Perovskite Films
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Overcoming the Anisotropic Growth Limitations of Free-Standing Single-Crystal Halide Perovskite Films

机译:克服独立式单晶卤化物钙钛矿薄膜的各向异性生长限制

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摘要

It is extremely challenging to grow single-crystal halide perovskite films (SCHPFs) with not only desired transport properties but also large lateral size with much thinner thickness. Here, we report the growth of freestanding single crystal CsPbBr3 SCHPFs with thickness less than 100 nm and a lateral size close to centimeter for the first time. A new model for growth kinetics (psi=Aexp[-(E-A-E-s)/(k(B)T)]) is proposed to address the surface energy and temperature effect on the growth rate of ultrathin CsPbBr3 single-crystal film. The experimental results and DFT calculations both demonstrated that the surfactant plays a critical role in modifying the surface energy and achieving anisotropic growth. This work opens new opportunities for high-quality SCHPFs with large lateral size and controllable thickness that may find wide applications for optoelectronic devices.
机译:制备不仅具有所需的输运性质,而且具有更薄厚度的大尺寸横向尺寸的卤化物钙钛矿单晶薄膜(SCHPF)是一项极具挑战性的工作。在这里,我们首次报道了厚度小于100nm、横向尺寸接近厘米的独立式单晶CsPbBr3 SCPFs的生长。提出了一种新的生长动力学模型(psi=Aexp[-(E-A-E-s)/(k(B)T)]),以研究表面能和温度对超薄CsPbBr3单晶薄膜生长速率的影响。实验结果和DFT计算都表明,表面活性剂在改变表面能和实现各向异性生长方面起着关键作用。这项工作为具有大侧向尺寸和可控厚度的高质量SCHPF提供了新的机会,可能在光电子器件中得到广泛应用。

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  • 来源
    《Angewandte Chemie》 |2021年第5期|共8页
  • 作者单位

    Soochow Univ Coll Energy Soochow Inst Energy &

    Mat Innovat Suzhou 215123 Peoples R China;

    Nanjing Univ Sci &

    Technol Coll Mat Sci &

    Engn MIIT Key Lab Adv Display Mat &

    Devices Nanjing 210094 Peoples R China;

    Soochow Univ Coll Energy Soochow Inst Energy &

    Mat Innovat Suzhou 215123 Peoples R China;

    Soochow Univ Coll Energy Soochow Inst Energy &

    Mat Innovat Suzhou 215123 Peoples R China;

    Purdue Univ Sch Mat Engn W Lafayette IN 47907 USA;

    Purdue Univ Sch Mat Engn W Lafayette IN 47907 USA;

    Nanjing Univ Sci &

    Technol Coll Mat Sci &

    Engn MIIT Key Lab Adv Display Mat &

    Devices Nanjing 210094 Peoples R China;

    Purdue Univ Sch Mat Engn W Lafayette IN 47907 USA;

    Soochow Univ Coll Energy Soochow Inst Energy &

    Mat Innovat Suzhou 215123 Peoples R China;

    Univ Buffalo State Univ New York Dept Mat Design &

    Innovat Buffalo NY 14260 USA;

    Soochow Univ Coll Energy Soochow Inst Energy &

    Mat Innovat Suzhou 215123 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用化学;
  • 关键词

    CsPbBr3; freestanding anisotropic growth; halide perovskite; single crystal film;

    机译:CSPBR3;独立各向异性生长;卤化物钙钛矿;单晶薄膜;

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