Exploring a Fatigue-Free Layered Hybrid Perovskite Ferroelectric for Photovoltaic Non-Volatile Memories

摘要

Through a functional unit-transmutation strategy, a fatigue-free layered hybrid perovskite ferroelectric (C6H5CH2NH3)(2)CsPb2Br7 (BCPB) has been developed, which demonstrates stable spontaneous polarization (P-s) of 6.5 mu C cm(-2) and high Curie temperature up to 425 K. Meanwhile, BCPB shows splendid bulk photovoltaic effect (BPVE) properties with noticeable zero-bias photocurrent density (5 mu A cm(-2)), and high on/off switching ratio of current (over 3x10(5)); these merits even overmatch the most known ferroelectric semiconductor BiFeO3. The unique structure with self-regulated net electrical charged layers gives rise to the fatigue-free feature of P-s and BPVE (no significant fatigue after 10(8) polarity switching cycles), promoting the potential applications of BCPB in photovoltaic non-volatile memories. This work offers an efficient approach for exploring fatigue-free semiconducting ferroelectrics as well as excavates their further applications in next-generation electronic devices.