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'Excess' electrons in LuGe

机译:“多余”电子中的浪费

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摘要

The monogermanide LuGe is obtained via high-pressure high-temperature synthesis (5-15 GPa, 1023-1423 K). The crystal structure is solved from single-crystal X-ray diffraction data (structure type FeB, space group Pnma, a=7.660(2) angstrom, b=3.875(1) angstrom, and c=5.715(2) angstrom, R-F=0.036 for 206 symmetry independent reflections). The analysis of chemical bonding applying quantum-chemical techniques in position space was performed. It revealed-beside the expected 2c-Ge-Ge bonds in the germanium polyanion-rather unexpected four-atomic bonds between lutetium atoms indicating the formation of a polycation by the excess electrons in the system Lu3+(2b)Ge(2-)x1 e(-). Despite the reduced VEC of 3.5, lutetium monogermanide is following the extended 8-N rule with the trend to form lutetium-lutetium bonds utilizing the electrons left after satisfying the bonding needs in the anionic Ge-Ge zigzag chain.
机译:通过高压高温合成(5-15GPa,1023-1423K)获得单锗化物。晶体结构由单晶X射线衍射数据(结构类型FeB,空间群Pnma,a=7.660(2)埃,b=3.875(1)埃,c=5.715(2)埃,对于206个对称性无关反射,R-F=0.036)求解。在位置空间中应用量子化学技术对化学键进行了分析。除了锗多阴离子中预期的2c Ge-Ge键之外,它还揭示了镥原子之间出乎意料的四个原子键,这表明Lu3+(2b)Ge(2-)x1 e(-)系统中多余的电子形成了聚阳离子。尽管VEC降低至3.5,但单锗化镥仍遵循扩展的8-N规则,其趋势是利用满足阴离子Ge-Ge之字形链中键合需求后留下的电子形成镥-镥键。

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