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Broadband infrared Mueller-matrix ellipsometry for studies of structured surfaces and thin films

机译:用于研究结构表面和薄膜的宽带红外穆勒 - 矩阵椭圆型材

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摘要

We present a high-optical-throughput infrared Mueller-matrix (MM) ellipsometer for the characterization of structured surfaces and ultrathin films. Its unprecedented sensitivity of about 10(-4) in the normalized MM elements enables studies of the complex vibrational fingerprint of thin organic films under different ambient conditions. The ellipsometer acquires quadruples of MM elements within a few 10 s to min, rendering it interesting for process and in-line monitoring. It uses retractable achromatic retarders for increased signal to noise, and tandem wire-grid polarizers for improved polarization control. We demonstrate several scientific and industry-related applications. First, we determine the 3D profile of mu m-sized trapezoidal SiO2 gratings on Si from azimuth-dependent MM measurements. Data modeling based on rigorous coupled-wave analysis is employed to quantify grating structure and orientation. We then monitor polymer relaxation processes with a time resolution of 47 s. Measurements of polymer films as thin as 7.7 nm illustrate the sensitivity of the device. We finally couple a liquid flow cell to the ellipsometer, highlighting the prospects for in situ infrared MM studies of thin films at solid-liquid interfaces. (C) 2018 Optical Society of America
机译:我们介绍了一种用于表征结构表面和超薄薄膜的高光通量红外穆勒·矩阵(mm)椭圆差。其在归一化MM元件中的其前所未有的约10(-4)的灵敏度能够在不同的环境条件下研究薄有机膜的复杂振动指纹。椭圆计数计在几十秒内获取二次MM元件,使其有趣的过程和在线监控。它使用可伸缩的消色差延迟器来增加信号到噪声,并且串联线电网偏振器用于改进的偏振控制。我们展示了几种科学和行业相关的应用。首先,从方目依赖的MM测量确定Si上的MU M大小梯形SiO2光栅的3D轮廓。基于严格耦合波分析的数据建模用于量化光栅结构和方向。然后,我们用47秒的时间分辨率监测聚合物弛豫过程。聚合物薄膜的测量为7.7nm表示器件的灵敏度。我们终于将液体流动电池耦合到椭圆仪,突出了原位红外MM在固液界面处的薄膜的前景。 (c)2018年光学学会

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  • 来源
    《Applied optics》 |2018年第27期|共10页
  • 作者单位

    Leibniz Inst Analyt Wissensch ISAS eV Schwatzschildstr 8 D-12489 Berlin Germany;

    Leibniz Inst Analyt Wissensch ISAS eV Schwatzschildstr 8 D-12489 Berlin Germany;

    Helmholtz Zentn Berlin Mat &

    Energie GmbH Inst Silizium Photovolta Kekulestr 5 D-12489 Berlin Germany;

    Helmholtz Zentn Berlin Mat &

    Energie GmbH Inst Silizium Photovolta Kekulestr 5 D-12489 Berlin Germany;

    Leibniz Inst Analyt Wissensch ISAS eV Schwatzschildstr 8 D-12489 Berlin Germany;

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  • 正文语种 eng
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