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Photonic bandpass filter characteristics of multimode SOI waveguides integrated with submicron gratings

机译:用亚微米光栅集成的多模SOI波导的光子带通滤波器特性

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摘要

It has been shown that a fundamental mode adiabatically launched into a multimode SOI waveguide with submicron grating offers well-defined flat-top bandpass filter characteristics in transmission. The transmitted spectral bandwidth is controlled by adjusting both waveguide and grating design parameters. The bandwidth is further narrowed down by cascading two gratings with detuned parameters. A semi-analytical model is used to analyze the filter characteristics (1500 nm = lambda = 1650 nm) of the device operating in transverse-electric polarization. The proposed devices were fabricated with an optimized set of design parameters in a SOI substrate with a device layer thickness of 250 nm. The pass bandwidth of waveguide devices integrated with single-stage gratings are measured to be similar to 24 nm, whereas the device with two cascaded gratings with slightly detuned periods (Delta Lambda = 2 nm) exhibits a pass bandwidth down to similar to 10 nm. (c) 2018 Optical Society of America
机译:已经表明,具有亚微米光栅的多模SOI波导被绝热地发射的基本模式提供了透射的明确定义的平顶带通滤波器特性。通过调整波导和光栅设计参数来控制发送的光谱带宽。通过级联具有障碍参数的两个光栅来进一步缩小带宽。半分析模型用于分析在横向电极化的装置的滤波器特性(1500nm& = 1650nm)。所提出的装置在SOI基板中具有优化的一组设计参数,其具有250nm的器件层厚度。测量与单级光栅集成的波导器件的传递带宽类似于24nm,而具有两个具有稍微障碍时段(Delta Lambda = 2nm)的级联光栅的装置表现出与10nm类似的通带下降。 (c)2018年光学学会

著录项

  • 来源
    《Applied optics》 |2018年第9期|共5页
  • 作者

    Sah Parimal; Das Bijoy Krishna;

  • 作者单位

    Indian Inst Technol Madras Dept Elect Engn Ctr NEMS &

    Nanophoton Integrated Optoelect Lab Madras 600036 Tamil Nadu India;

    Indian Inst Technol Madras Dept Elect Engn Ctr NEMS &

    Nanophoton Integrated Optoelect Lab Madras 600036 Tamil Nadu India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用;
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