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Broadband and compact polarization beam splitter based on an asymmetrical directional coupler with extra optimizing designs

机译:基于不对称方向耦合器的宽带和紧凑型偏振分频带,具有额外的优化设计

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摘要

In this paper, a novel, to the best of our knowledge, polarization beam splitter (PBS) based on an asymmetrical directional coupler (DC) was proposed, which consists of a strip waveguide (WG) and a Si3N4 loaded horizontal slot WG. By carefully adjusting the geometric parameters of the DC, the phase match condition between these two WGs can be satisfied for the transverse magnetic (TM) polarization, while the coupling efficiency of the transverse electric (TE) polarization is frustrated due to the large phase mismatch. The extra optimizing designs include adding filters to the output ports as well as introducing the tapered structure into the DC, which is settled by the particle swarm optimizing (PSO) algorithm so that the performance of the proposed PBS is improved over a broadband range. Numerical simulations show that the bandwidths for the extinction ratio (ER) > 20 dB, 30 dB, and 40 dB are 160 nm, 95 nm, and 50 nm, respectively, with insertion loss (IL) < 1 dB for the wavelength of 1.49-1.58 mu m. The analysis of the deviations demonstrates that the proposed PBS allows high fabrication tolerances. (C) 2019 Optical Society of America
机译:本文提出了一种基于不对称定向耦合器(DC)的最佳知识的新颖,这包括条带波导(WG)和Si3N4装载的水平槽WG。通过仔细调整DC的几何参数,可以对横向磁(TM)偏振来满足这两个WG之间的相位匹配条件,而横向电气(TE)偏振的耦合效率由于大相失相而令人沮丧。额外的优化设计包括将滤波器添加到输出端口以及将锥形结构引入DC,由粒子群优化(PSO)算法稳定,以便在宽带范围内提高所提出的PBS的性能。数值模拟表明,消光比(ER)> 20dB,30dB和40dB的带宽分别为160nm,95nm和50nm,其插入损耗(IL)<1 dB为1.49的波长-1.58 mu m。对偏差的分析表明,所提出的PBS允许高造型公差。 (c)2019年光学学会

著录项

  • 来源
    《Applied optics》 |2019年第30期|共6页
  • 作者单位

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

    Shanghai Ind Technol Res Inst Shanghai 201800 Peoples R China;

    Shanghai Ind Technol Res Inst Shanghai 201800 Peoples R China;

    Chinese Acad Sci Shanghai Inst Microsyst &

    Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China;

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  • 正文语种 eng
  • 中图分类 应用;
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