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首页> 外文期刊>Applied optics >High bandwidth and responsivity mid-infrared graphene photodetector based on a modified metal-dielectric-graphene architecture
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High bandwidth and responsivity mid-infrared graphene photodetector based on a modified metal-dielectric-graphene architecture

机译:基于改进的金属介质 - 石墨烯架构的高带宽和反应性中红外石墨烯光电探测器

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摘要

In this paper, a novel graphene-based mid-infrared photoconductive photodetector is designed that is composed of nanophotodetectors in series and parallel forming an array. The whole structure utilizes a single "unpatterned" graphene layer in a modified metal-dielectric-graphene (MDG) architecture that is composed of a conventional MDG structure combined with additional nanoelectrodes for photocurrent guiding and absorption enhancement. Finite difference time domain and finite element methods are utilized to obtain optical and electrostatic characteristics of the photodetector. Specifically, responsivity, quantum efficiency, dark current, bandwidth, noise equivalent power (NEP), and specific detectivity (D*) are extracted by employing realistic graphene as well as graphene-metal characteristics. For an optimized device, maximum absorption efficiency is as much as 70% at a wavelength of lambda = 6.77 mu m; however, the peak absorption wavelength can be effectively tuned between lambda = 6-7 mu m. It is shown that increasing the drain-source voltage enhances the responsivity and bandwidth with a side effect of increasing the dark current. Responsivity of the 2 x 2 photodetector is R-A = 0.63 AW(-1) for V-DS = 0.5 V with I-DARk = 350 mu A, NEP = 16.91 pW/root Hz, and D* = 1.53 x 10(5) Jones. (C) 2019 Optical Society of America
机译:本文设计了一种基于石墨烯的中红外光电导电阻器,设计由串联和平行形成阵列的纳米光电图组成。整个结构在改进的金属介质 - 石墨烯(MDG)架构中利用单个“未绘图的”石墨烯层(MDG)架构,该架构由传统的MDG结构与用于光电流引导和吸收增强的额外纳米电极组成。有限差分时间域和有限元方法用于获得光电探测器的光学和静电特性。具体地,通过采用现实石墨烯以及石墨烯 - 金属特性来提取响应性,量子效率,暗电流,带宽,噪声等效功率(NEP)和特定检测率(D *)。对于优化的装置,在Lambda = 6.77 mu m的波长下,最大吸收效率高达70%;然而,峰值吸收波长可以在Lambda =6-7μm之间有效地调整。结果表明,增加漏极源电压增强了响应性和带宽,其副作用增加了暗电流。对于V-DS的V-DS = 0.63W(-1)的响应度,具有I-Dark =350μma,Nep = 16.91 pw / Root Hz,以及D * = 1.53 x 10(5)琼斯。 (c)2019年光学学会

著录项

  • 来源
    《Applied optics》 |2019年第23期|共8页
  • 作者

    Jafari Behnam; Soofi Hadi;

  • 作者单位

    Univ Tabriz Sch Engn Emerging Technol Tabriz 5166616471 Iran;

    Univ Tabriz Sch Engn Emerging Technol Tabriz 5166616471 Iran;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用;
  • 关键词

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