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Design of silicon-wire waveguide ultracompact racetrack resonators: geometrical parameters for optimal coupling

机译:硅丝波导超自联跑车谐振器的设计:最佳耦合的几何参数

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摘要

In this paper, it is shown that a suitable choice of the geometrical parameters of a silicon-wire waveguide micro-racetrack resonator structure can lead to a substantial improvement in the control of coupling coefficients and, hence, the design of ultracompact devices for high-performance channel add-drop filters and all-optical switching applications. On the one hand, some simple theoretical arguments and simulation results indicate that the reduction of the silicon-wire rectangular waveguide cross-section area (width x height) is possible, from standard (450 nm x 220 nm) to (380 nm x 200 nm) on both the bus and the resonator waveguides; this action, apart from still guaranteeing a quasi-TE single-mode operation, would provide an effective improvement into scale-ofintegration by a 1.30 factor per device volume. On the other hand, it will be shown by a semianalytical method (analytical calculation + numerical simulation) that achieving the waveguide-racetrack optimal coupling condition for a particular application can be reduced to a prime calculation of the main resonator geometrical parameters (bend radius, straight length, air gap and overall coupling length). In particular, the design of high-performance ultracompact waveguide-racetrack resonator structures, with pre-established Q factor (Q >= 2000), free spectral range (FSR >= 15 nm), full width at half-maximum (FWHM <= 5 nm), finesse (F >= 40) or extinction ratio signals (ER >= 20 dB) can be systematically obtained with this procedure. (C) 2019 Optical Society of America.
机译:在本文中,示出了合适的硅 - 线波导微跑车谐振器结构的几何参数的选择可以导致耦合系数的控制的显着改善,从而实现高度的超自联装置的设计性能通道添加丢失滤波器和全光交换应用。一方面,一些简单的理论争论和仿真结果表明,可以从标准(450nm x 220nm)到(380nm x 200纳米)在总线和谐振器波导上;除了仍然保证准TE单模操作之外,此动作将通过每个设备体积的1.30因素提供有效的融合块。另一方面,它将通过半角质方法(分析计算+数值模拟)示出,可以减少实现特定应用的波导 - 赛道最佳耦合条件,可以减少到主谐振器几何参数的主要计算(弯曲半径,直长度,气隙和整体耦合长度)。特别地,高性能超自联波导 - 赛道谐振器结构的设计,具有预先建立的Q因子(Q> = 2000),自由谱范围(FSR> = 15nm),半最大宽度(FWHM <=可以通过该过程系统地获得5 nm),技巧(F> = 40)或消光比信号(ER> = 20 dB)。 (c)2019年光学学会。

著录项

  • 来源
    《Applied optics》 |2019年第8期|共13页
  • 作者

    Perez Menendez Ramon Jose;

  • 作者单位

    Univ Nacl Educ Distancia Ctr Asociado Lugo Barrio Tolda de Castela 4 Lugo 27002 Spain;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用;
  • 关键词

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