...
首页> 外文期刊>Applied optics >High-efficiency edge-coupling based on lithium niobate on an insulator wire waveguide
【24h】

High-efficiency edge-coupling based on lithium niobate on an insulator wire waveguide

机译:基于铌酸锂在绝缘子丝波导上的高效边缘耦合

获取原文
获取原文并翻译 | 示例
           

摘要

Edge-coupling on single-crystal thin-film lithium niobate on insulator (LNOI) was systematically studied in this paper. Aninverse taper-shaped spot-size converter (SSC) to convert the mode field fromthe laser chip to a nanoscale LNOI waveguide was adopted to improve the coupling efficiency. Structure of the edge coupler was fully investigated and optimized by using the eigenmode expansion method. The single-mode conditions of the LNOI waveguide for three common communication bands were taken into consideration. Further, the length and tip width of the inverse taper, the cross-section dimensions of SiON waveguide, and the sidewall angle were investigated with respect to coupling efficiency. As a result, the maximum coupling efficiency from an edge coupler to laser chip can reach 54%, 48%, and 58% at 1550, 1310, and 850 nm in Z-cut LNOI for quasi-TM mode, respectively. This proposed work gives a better understanding of the function of the edge coupler based on LNOI material and provides an appropriate method for the design of an edge coupler with high efficiency, which could benefit the further application of high-density monolithic integrated optical components. (C)2020 Optical Society of America.
机译:本文系统地研究了在绝缘体(LNOI)上单晶薄膜铌酸铌的边缘耦合。采用非型锥形点尺寸转换器(SSC)从激光芯片转换为纳米LNOI波导的模式场,以提高耦合效率。通过使用特征模型扩展方法完全研究和优化边缘耦合器的结构。考虑了三种公共通信频带的LNOI波导的单模条件。此外,相对于耦合效率研究了逆锥度的长度和尖端宽度,SION波导的横截面尺寸以及侧壁角度。结果,来自边缘耦合器到激光芯片的最大耦合效率分别可以在1550,1310和850nm中达到54%,48%和58%,分别用于准TM模式的Z-Cut LNOI。该所提出的工作更好地了解基于LNOI材料的边缘耦合器的功能,并提供具有高效率的边缘耦合器的适当方法,这可以有利于高密度整体集成光学组件的进一步应用。 (c)2020美国光学学会。

著录项

  • 来源
    《Applied optics》 |2020年第22期|共8页
  • 作者单位

    Beijing Univ Technol Inst Laser Engn Inst Adv Technol Semicond Opt &

    Elect Beijing 100124 Peoples R China;

    Beijing Univ Technol Inst Laser Engn Inst Adv Technol Semicond Opt &

    Elect Beijing 100124 Peoples R China;

    Beijing Univ Technol Inst Laser Engn Inst Adv Technol Semicond Opt &

    Elect Beijing 100124 Peoples R China;

    Beijing Univ Technol Inst Laser Engn Inst Adv Technol Semicond Opt &

    Elect Beijing 100124 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用;
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号