High-performance ambipolar self-assembled Au/Ag nanowire. based vertical quantum dot field effect transistor

摘要

Most lateral PbSe quantum dot. field effect transistors (QD FETs). show a low on current/off current (I-on/I-off) ratio in charge transport measurements. A new strategy to provide generally better performance is to design PbSe QD FETs with vertical architecture, in which the structure parameters can be tuned flexibly. Here, we fabricated a novel room-temperature operated vertical quantum dot field effect transistor with a channel of 580 nm, where self-assembled Au/Ag nanowires served as source transparent electrodes and PbSe quantum dots as active channels. Through investigating the electrical characterization, the ambipolar device exhibited excellent characteristics with a. high I-on/I-off current ratio of. about 1 x 10(5) and a low sub-threshold slope (0.26 V/decade) in the p-type regime. The all-solution processing vertical architecture provides a convenient way for low cost, large-area integration of the device.