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An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires

机译:基于水溶液的掺杂策略,用于大规模合成掺Sb的ZnO纳米线

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An aqueous solution-based doping strategy was developed for controlled doping impurity atoms into a ZnO nanowire (NW) lattice. Through this approach, antimony-doped ZnO NWs were successfully synthesized in an aqueous solution containing zinc nitrate and hexamethylenetetramine with antimony acetate as the dopant source. By introducing glycolate ions into the solution, a soluble antimony precursor (antimony glycolate) was formed and a good NW morphology with a controlled antimony doping concentration was successfully achieved. A doping concentration study suggested an antimony glycolate absorption doping mechanism. By fabricating and characterizing NW-based field effect transistors (FETs), stable p-type conductivity was observed. A field effect mobility of 1.2cm ~2V~(- 1)s~(- 1) and a carrier concentration of 6 × 1017cm- 3 were achieved. Electrostatic force microscopy (EFM) characterization on doped and undoped ZnO NWs further illustrated the shift of the metal-semiconductor barrier due to Sb doping. This work provided an effective large-scale synthesis strategy for doping ZnO NWs in aqueous solution.
机译:开发了一种基于水溶液的掺杂策略,用于将杂质原子控制掺杂到ZnO纳米线(NW)晶格中。通过这种方法,在含硝酸锌和六亚甲基四胺的水溶液中,以醋酸锑为掺杂源,成功地合成了掺锑的ZnO NW。通过将乙醇酸根离子引入溶液中,形成了可溶的锑前体(乙醇酸锑),并成功实现了具有可控锑掺杂浓度的良好NW形貌。掺杂浓度研究表明乙醇酸锑吸收掺杂机理。通过制造和表征基于NW的场效应晶体管(FET),可以观察到稳定的p型导电性。获得了1.2cm〜2V〜(-1)s〜(-1)的场效应迁移率和6×1017cm-3的载流子浓度。掺杂和未掺杂的ZnO NW的静电力显微镜(EFM)表征进一步说明了由于Sb掺杂而导致的金属半导体势垒的移动。这项工作为在水溶液中掺杂ZnO NWs提供了有效的大规模合成策略。

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