首页> 外文期刊>International Journal of Quantum Chemistry >Next-nearest neighbour contributions to the XPS binding energies and XANES absorption energies of P and As in transition-metal arsenide phosphides MAs1-yPy having the MnP-type structure
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Next-nearest neighbour contributions to the XPS binding energies and XANES absorption energies of P and As in transition-metal arsenide phosphides MAs1-yPy having the MnP-type structure

机译:次近邻对具有MnP型结构的过渡金属砷化物磷化物MAs1-yPy中P和As的XPS结合能和XANES吸收能的贡献

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摘要

X-ray photoelectron spectroscopic (XPS) and X-ray absorption near-edge spectroscopic (XANES) measurements have been made for several series of metal arsenide phosphides MAs1-yPy (M = Co, Fe, Cr) that adopt the MO-type Structure. The P and As XPS binding energies (BEs) and XANES absorption energies of the metal arsenide phosphides do not follow the trend observed for the simple binary phosphides or arsenides, a deviation that arises from the combination of nearest and next-nearest neighbour contributions acting oil the 13 or As photoemission or absorption site. The P 2p(3/2) BEs and K-edge absorption energies are lower in MAs1-yPy than in MP because the P atoms are more negatively charged and because the P photoemission or absorption site is screened to a greater extent by less positively charged nearest-neighbour M atoms and more negatively charged next-nearest neighbour P atoms. The As L-3- and K-edge absorption energies are higher in MAs1-yPy than in MAs primarily because the As atoms are less negatively charged. The M charge has been evaluated from analysis of the M 2p XPS spectra and the M L- and K-edge XANES spectra. (c) 2008 Elsevier Inc. All rights reserved.
机译:对采用MO型结构的多个系列金属砷化物磷化物MAs1-yPy(M = Co,Fe,Cr)进行了X射线光电子能谱(XPS)和X射线吸收近边缘光谱(XANES)测量。金属砷化物磷化物的P和As XPS结合能(BEs)和XANES吸收能不遵循简单的二元磷化物或砷化物所观察到的趋势,该偏差是由于最近和最近邻点作用油的组合而产生的13或作为光发射或吸收位点。 MAs1-yPy中的P 2p(3/2)BE和K边缘吸收能比MP中的低,因为P原子带更多的负电荷,并且P的光发射或吸收位点被较少带正电的电荷屏蔽得更多最近邻M原子和带负电的次近邻P原子。 MAs1-yPy中的As L-3-和K边缘吸收能比MAs高,这主要是因为As原子带的负电荷少。通过分析M 2p XPS光谱以及M L和K边缘XANES光谱,可以评估M电荷。 (c)2008 Elsevier Inc.保留所有权利。

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