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首页> 外文期刊>Applied optics >Passively Q-switched Nd:YAG/Cr4+:YAG bonded crystal microchip laser operating at 1112 nm and its application for second-harmonic generation
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Passively Q-switched Nd:YAG/Cr4+:YAG bonded crystal microchip laser operating at 1112 nm and its application for second-harmonic generation

机译:被动调Q Nd:YAG / Cr4 +:YAG键合晶体微芯片激光器工作在1112 nm及其在二次谐波产生中的应用

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摘要

A passively Q-switched Nd:YAG/Cr4+:YAG microchip laser operating at 1112 nm is demonstrated. Under a pump power of 5.5 W, a maximum average output power of 623m W was obtained with T = 6% output coupler, corresponding to an optical-to-optical conversion efficiency of 11.3% and a slope efficiency of 19.5%. The minimum pulse width was 2.8 ns, the pulse energy and peak power were 39.3 mu J and 14 kW, respectively. Additionally, based on the 1112 nm laser, a 230 mW 556 nm green-yellow laser was achieved within an LBO crystal. (c) 2015 Optical Society of America
机译:演示了在1112 nm下工作的被动Q开关Nd:YAG / Cr4 +:YAG微芯片激光器。在5.5 W的泵浦功率下,使用T = 6%的输出耦合器可获得623m W的最大平均输出功率,对应的光光转换效率为11.3%,斜率效率为19.5%。最小脉冲宽度为2.8 ns,脉冲能量和峰值功率分别为39.3μJ和14 kW。另外,基于1112 nm激光,在LBO晶体内获得了230 mW 556 nm绿黄色激光。 (c)2015年美国眼镜学会

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