Simulation of intensity of a patterned thin-film structure

摘要

An enhanced thin-film model is proposed to simulate the reflecting intensity of a patterned thin-film structure received by a CCD. This improved thin-film model can be adopted to simulate the intensity profile of a patterned multilayer and diffractive structure. The model is matched to the image by adding together components from all of the patterned regions in the target and multiplying the sum by a complex reflectance transfer matrix, which represents all of the material characteristics.