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Oxidation of evaporated porous silicon rugate filters

机译:蒸发的多孔硅酸乙酯过滤器的氧化

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Rugate filters are thin-film optical interference coatings with sinusoidal variation of the refractive index. Several of these filters were fabricated with glancing angle deposition, which exploits atomic competition during growth to create nanoporous materials with controllable effective refractive index. This method enables the fabrication of devices with almost arbitrary refractive index profiles varying between the ambient, 1.0, and the index of the film material, in this case silicon with an index of 4.0 (at 600 nm). As these filters are inherently porous, oxidation of the silicon can occur throughout the device layer, and here we study the intentional oxidation of silicon filters by high-temperature reaction with gaseous oxygen. We find that a significant portion of the silicon filter oxidizes in approximately 10 min when heated to 600 deg C-650 deg C in an oxygen environment; oxidation then continues slowly over several hours. The presence of water vapor has little apparent effect on the oxidation reaction, and attempts to oxidize with ozone at room temperature were unsuccessful. As silicon filters oxidize to become silica, spectral blue-shifts and increased short-wavelength transmittance are observed. Measured and calculated transmittance spectra generally agree, although the lack of absorption and dispersion in the theoretical model limits detailed comparison.
机译:反射滤光片是具有正弦变化的折射率的薄膜光学干涉涂层。其中一些滤光片采用掠角沉积法制造,该沉积法利用生长过程中的原子竞争来产生具有可控有效折射率的纳米多孔材料。该方法使得能够制造具有在环境,1.0和膜材料的折射率之间变化的几乎任意折射率分布的器件,在这种情况下,硅的折射率为4.0(在600 nm处)。由于这些过滤器本身是多孔的,因此硅的氧化会在整个器件层中发生,在这里我们研究通过与气态氧的高温反应对硅过滤器的有意氧化。我们发现,在氧气环境中加热到600摄氏度至650摄氏度时,硅过滤器的很大一部分会在大约10分钟内氧化;然后氧化持续数小时。水蒸气的存在对氧化反应几乎没有明显的影响,并且在室温下用臭氧氧化的尝试是失败的。当硅滤光片氧化成二氧化硅时,观察到光谱蓝移和增加的短波透射率。尽管理论模型中缺乏吸收和分散,限制了详细的比较,但测量和计算的透射光谱通常是一致的。

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