Behavior of GeSbTeBi phase-change optical recording media under subnanosecond pulsed laser irradiation

摘要

We investigated the variations in reflectivity during the phase transition between amorphous and crystalline states of a Bi-doped GeTe-Sb_(2)Te_(3) pseudobinary compound film with subnanosecond laser pulses, using a pump-and-probe technique. We also used a two-laser static tester to estimate the onset time of crystallization under 2.0-μs pulse excitation. Experimental results indicate that the formation of a melt-quenched amorphous mark is completed in ～1 ns, but that crystalline mark formation on an as-deposited amorphous region requires several hundred nanoseconds. Simple arguments based on heat diffusion are used to explain the time scale of amorphization and the threshold for creation of a burned-out hole in the phase-change film.