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Wave-mixing properties in commercially available semi-insulator grade GaAs crystals

机译:市售半绝缘级GaAs晶体的混波特性

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We have been successful in procuring commercial semi-insulator grade GaAs crystals from Sumitomo that exhibit in our laboratory, a gain coefficient of 6.4 cm↑(-1), a phase-conjugate beam reflectivity of 6, and a grating build-up time of less than 10 ms at a wavelength of 1.06 μm. Electrical and optical properties of these crystals in two- and four-wave-mixing experiments are described for both dc electric field and moving-grating biases on the crystal. Oscillator experiments have also been performed with a retromodulator as the retroreflective mirror in the feedback loop of the resonator cavity.#1997 Optical Society of America
机译:我们已经成功地从住友商事公司购买了商业化的半绝缘体级砷化镓晶体,其增益系数为6.4 cm↑(-1),相位共轭束反射率为6,光栅建立时间为在1.06μm的波长下小于10 ms。这些晶体在直流和电场中的直流电场和移动光栅偏置下的两波和四波混频实验中的电学和光学特性均得到了描述。还使用谐振器作为谐振器腔反馈回路中的后向反射镜进行了振荡器实验。#1997美国光学学会

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