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首页> 外文期刊>Angewandte Chemie >Bonding Nature of Local Structural Motifs in Amorphous GeTe
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Bonding Nature of Local Structural Motifs in Amorphous GeTe

机译:非晶GeTe中局部结构基序的键合性质

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Despite its simple chemical constitution and unparalleled technological importance, the phase-change material germanium telluride (GeTe) still poses fundamental questions. In particular, the bonding mechanisms in amorphous GeTe have remained elusive to date, owing to the lack of suitable bond-analysis tools. Herein, we introduce a bonding indicator for amorphous structures, dubbed "bond-weighted distribution function" (BWDF), and we apply this method to amorphous GeTe. The results underline a peculiar role of homopolar Ge-Ge bonds, which locally stabilize tetrahedral fragments but not the global network. This atom-resolved (i.e., chemical) perspective has implications for the stability of amorphous "zero bits" and thus for the technologically relevant resistance-drift phenomenon.
机译:尽管其化学成分简单,并且具有无与伦比的技术重要性,但相变材料碲化锗(GeTe)仍然存在一些基本问题。尤其是,由于缺乏合适的键合分析工具,迄今为止,非晶态GeTe中的键合机制仍然难以捉摸。在这里,我们介绍了一种用于非晶结构的结合指示剂,称为“键加权分布函数”(BWDF),并将此方法应用于非晶GeTe。结果强调了同质Ge-Ge键的独特作用,该键局部稳定四面体片段,但不能稳定全局网络。这种原子分解(即化学)的观点对非晶“零位”的稳定性以及因此在技术上相关的电阻漂移现象具有影响。

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