Current status of GaN-based vertical-cavity surface-emitting lasers (VCSELs) is described. The structures and characteristics of the GaN-based VCSELs reported so far are compared with those of red/infrared VCSELs. While low threshold currents have been obtained in the GaN-based VCSELs, the issue is that a light output power is low. Such a low output power could be improved by a design with low absorption and good current injection. The characteristic of AlInN/GaN DBR is promising, and even better than that of A1As/A1GaAs DBR in red VCSELs. It is found that a bit high growth temperature was required for high-quality AlInN layers, resulting in highly reflective AlInN/GaN DBR. A CW operation of a GaN-based VCSEL with the AlInN/GaN DBR was obtained, showing a low threshold current. GaN-based VCSELs will be developed as novel light sources required in safe and secure society, such as retinal scanning displays for low vision, lighting systems with high-confidentiality and high-speed light communications, and adaptive headlight for low-dazzling.
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机译：描述了基于GaN的垂直腔表面发射激光器（VCSEL）的当前状态。将迄今为止报道的基于GaN的VCSEL的结构和特性与红色/红外VCSEL的结构和特性进行比较。尽管在基于GaN的VCSEL中获得了低阈值电流，但问题是光输出功率很低。通过具有低吸收和良好电流注入的设计可以改善这种低输出功率。在红色VCSEL中，AlInN / GaN DBR的特性很有希望，甚至优于A1As / A1GaAs DBR。发现对于高质量的AlInN层需要一点高的生长温度，从而导致高反射率的AlInN / GaN DBR。获得具有AlInN / GaN DBR的GaN基VCSEL的CW操作，显示出较低的阈值电流。基于GaN的VCSEL将被开发为安全和有保障的社会所需的新型光源，例如用于低视力的视网膜扫描显示器，具有高机密性和高速光通信的照明系统以及用于低眩目的自适应前灯。
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