Photoacoustic and photothermal radiometry spectra of implanted Si wafers

摘要

The effects of Ar~(+8) and O~(+6) ion implantation of Si were investigated by photoacoustic (PA) and photothermal radiometry (PTR) methods. The surface of Si sample was treated with Ar~(+8) or O~(+6) ions with various doses. Amplitude and phase PA spectra of Si with and without ion-implantation were measured and analyzed in the wavelength range from 800 to 1600nm (the energy range from 0.75 to 1.55 eV) and frequency of modulation, from 1Hz to 100 kHz.