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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A Broadband CMOS RF Front End for Direct Sampling Satellite Receivers
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A Broadband CMOS RF Front End for Direct Sampling Satellite Receivers

机译:用于直接采样卫星接收器的宽带CMOS RF前端

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This paper presents a comparative analysis between two new architectures for RF programmable-gain amplifiers (RFPGAs): voltage-mode RFPGA-Vand current-mode RFPGA-I. RFPGA-V utilizes multiple-switch-multiple-amplifier configuration and gain interpolation method to achieve a fine gain step of 0.25-dB over 42-dB gain range for the band of 250 MHz to 2.3 GHz. Meanwhile, RFPGA-I uses a current steering approach to achieve a fine gain step of 0.25-dB over 42-dB gain range for an even wider band of 250 MHz to 3.4 GHz. Since the active feedback topology is used, no off-chip inductor is needed in either RFPGA, especially for the low-frequency band. In addition, both RFPGA-V and RFPGA-I are able to handle maximum 4.4 V peak-to-peak input signal without compromising their high operating bandwidth. Two broadband RF front ends for direct sampling receivers, which include either RFPGA-V or RFPGA-I followed by the same gain buffer and RF filter, have been demonstrated. For the RF front end with RFPGA-V, the measured gain, noise figure, third-order input-referred intercept point (IIP3), and second-order input-referred intercept point (IIP2) in the differential mode are 29.5 dB, 5.2 dB, -10.9 dBm, and 31.4 dBm, respectively. With RFPGA-I, they are 30.5 dB, 3 dB, -10.5 dBm, and 21.1 dBm, respectively. Both RF front ends consume approximated 50 mW and occupy the similar area of 0.32 mm(2) in 28-nm CMOS technology.
机译:本文对RF可编程增益放大器(RFPGA)的两种新架构进行了比较分析:电压模式RFPGA-V和电流模式RFPGA-I。 RFPGA-V利用多开关多放大器配置和增益插值方法,在250 MHz至2.3 GHz频带的42 dB增益范围内实现0.25 dB的精细增益阶跃。同时,RFPGA-I使用电流控制方法,在250 dB至3.4 GHz甚至更宽的频带上,在42 dB的增益范围内实现了0.25 dB的精细增益阶跃。由于使用了有源反馈拓扑,因此在两个RFPGA中都不需要片外电感器,尤其是对于低频频段。此外,RFPGA-V和RFPGA-I均能够处理最大4.4 V峰峰值输入信号,而不会影响其高工作带宽。已经演示了两个用于直接采样接收器的宽带RF前端,包括RFPGA-V或RFPGA-I,后跟相同的增益缓冲器和RF滤波器。对于带有RFPGA-V的RF前端,在差分模式下,测得的增益,噪声系数,三阶输入参考截取点(IIP3)和二阶输入参考截取点(IIP2)为29.5 dB,5.2 dB,-10.9 dBm和31.4 dBm。使用RFPGA-I,它们分别为30.5 dB,3 dB,-10.5 dBm和21.1 dBm。在28 nm CMOS技术中,两个RF前端的功耗均约为50 mW,并占据0.32 mm(2)的相似面积。

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