Interface characterisation of ZnSe/CuGaSe_2 heterojunction

摘要

The ZnSe/CuGaSe_2 heteojunctions were fabricated by flash evaporation technique of CuGaSe_2 onto the (110) surface of ZnSe crystals. CuGaSe_2 layers had thickness ～2-4 μm and showed a hole concentration up to (1.5-18.0)×10~18 cm~-3 and mobility μ～4-24 cm~2V~-1s~-1 at 300 K. The charge carrier concentration in ZnSe crystals at 300 K was n=5.6×10~16 cm~-3 and their mobility μ=300 cm~2V~-1s~-1. The investigated ZnSe/CuGaSe_2 heterojunctions have at the interface an intermediate layer with a thickness of ～450-750 A and a linear graded band gap as well as an i-ZnSe compensated layer with a thickness of ～1-2 μm and resistivity ρ～10~8-10~9 Ω cm.