A simple analytical treatment of edge-illuminated VMJ silicon solar cells

摘要

The series connected silicon vertical multi-junctions (VMJs) solar cells have been suggested as means for ensuring high voltage high efficiency solar cells. This study includes a review of some previously published work concerning the edge-illuminated VMJs solar cells. We introduce a simple one-dimensional analysis to study the high voltage series connected silicon VMJs solar cells. The cell, under study, consists of 40 VMJs. Each junction (unit cell) has dimensions of 250 μm x 0.78 cm x 500 μm. We calculate the short circuit current, the open circuit voltage and the efficiency for an ideal cell, having perfect carrier collection at short circuit conditions, and for real cells. An optimization with respect to the base doping, the emitter doping, the surface recombination velocity and the number of junctions is done for the real cell. A conversion efficiency of 20% has been calculated under AM 1.5 light spectrum for real cells having a base doping of 10~(16) cm~(-3) and an emitter doping of 10~(17) cm~(-3).