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Photoluminescence characteristics of CdS layers deposited in a chemical bath and their correlation to CdS/CdTe solar cell performance

机译:化学浴中沉积的CdS层的光致发光特性及其与CdS / CdTe太阳能电池性能的关系

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In this work, we study CdS films processed by chemical bath deposition (CBD) using different thiourea concentrations in the bath solution with post-thermal treatments using CdCl_2. We study the effects of the thiourea concentration on the photovoltaic performance of the CdS/CdTe solar cells, by the analysis of the Ⅰ- Ⅴ curve, for S/Cd ratios in the CBD solution from 3 to 8. In this range of S/Cd ratios the CdS/CdTe solar cells show variations of the open circuit voltage (V_(oc)), the short circuit current (J_(sc)) and the fill factor (FF). Other experimental data such as the optical transmittance and photolu-minescence were obtained in order to correlate to the Ⅰ-Ⅴ characteristics of the solar cells. The best performance of CdS-CdTe solar cells made with CdS films obtained with a S/Cd ratio of 6 is explained in terms of the sulfur vacancies to sulfur interstitials ratio in the CBD-CdS layers.
机译:在这项工作中,我们研究了使用化学浴沉积法(CBD)在浴液中使用不同浓度的硫脲和CdCl_2进行后热处理的CdS膜。我们通过分析Ⅰ-Ⅴ曲线,研究了CBD溶液中S / Cd比为3到8的硫脲浓度对CdS / CdTe太阳能电池光伏性能的影响。 CdS / CdTe太阳能电池的Cd比显示开路电压(V_(oc)),短路电流(J_(sc))和填充系数(FF)的变化。为了获得与太阳能电池的Ⅰ-Ⅴ特性相关的其他实验数据,如透光率和光致发光。用C / Cd比为6的CdS薄膜制成的CdS-CdTe太阳能电池的最佳性能,是根据CBD-CdS层中的硫空位与硫间隙的比率来解释的。

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