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Photocatalytic hydrogen evolution over CuCrO_2

机译:CuCrO_2上光催化制氢

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We have been studying the technical feasibility of a photochemical H_2 evolution based on a dispersion of CuCrO_2 powder in aqueous electrolytes containing various reducing agents (S~(2-), SO_3~(2-) and S_2O_3~(2-)). The title oxide combines a fair resistance to corrosion with an optimal band gap E_g of 1.32 eV. The intercalation of a small amount of oxygen should be accompanied by a partial oxidation of Cu~+ into Cu~(2+) implying a p-type semiconductivity. The S~(2-) oxidation inhibits the photocorrosion and the H_2 evolution increases parallel to polysulfides S_n~(2-) formation. Most of H_2 is produced when p-CuCrO_2 is connected to n-Cu_2O formed in situ. H_2 liberation proceeds mostly on CuCrO_2 while the oxidation of S~(2-) takes place over Cu_2O surface and the hetero system Cu_2O/CuCrO_2 is optimized with respect to some physical parameters. The photoactivity is dependent on preparation conditions and lowering the synthesis temperature through nitrate route leads to an increase in specific surface area S_(sp). The photoelectrochemical H_2 production is a mul-tistep process where the rate determining step is the arrival of electrons at the interface because of their low mobility. Prolonged irradiation ( > 80 min) leads to a pronounced decrease of the photoactivity; the tendency toward saturation is due to the undesired back reduction of polysulfides S_n~(2-) in a closed system and to their strong absorption in the visible region (λ_(max) = 520 nm).
机译:我们已经研究了基于CuCrO_2粉末在含有各种还原剂(S〜(2-),SO_3〜(2-)和S_2O_3〜(2-))的水性电解质中的分散光化学H_2的技术可行性。标题氧化物结合了良好的耐腐蚀性和1.32eV的最佳带隙E_g。少量氧气的插入应伴随着Cu〜+部分氧化为Cu〜(2+),暗示p型半导电性。 S〜(2-)的氧化抑制了光腐蚀,H_2的释放与多硫化物S_n〜(2-)的形成平行。当p-CuCrO_2连接到原位形成的n-Cu_2O时,会产生大部分H_2。 H_2的释放主要在CuCrO_2上进行,而S〜(2-)的氧化发生在Cu_2O的表面上,并且针对某些物理参数优化了杂化系统Cu_2O / CuCrO_2。光活性取决于制备条件,并且通过硝酸盐途径降低合成温度导致比表面积S_(sp)增加。光电化学H_2的产生是一个多步过程,其中速率确定步骤是电子由于其低迁移率而到达界面。长时间照射(> 80分钟)会导致光活性明显降低;趋于饱和的趋势是由于多硫化物S_n〜(2-)在封闭系统中发生了不希望的反还原,以及它们在可见光区域(λ_(max)= 520 nm)的强吸收。

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