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Influence of RMS strain on optical band gap of ZincPhthalocyanine (ZnPc) thin films

机译:RMS应变对酞菁锌(ZnPc)薄膜的光学带隙的影响

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摘要

The Flash evaporated ZincPhthalocyanine (ZnPc) thin films were analyzed using atomic force microscope (AFM). A homogeneous distribution of crystalline domains can be observed from the image. The crystallite size increases with increase in film thickness. From the transmission spectra, the transmission is found to be decrease with increase of film thickness. The optical transition in ZnPc films is found to be direct and allowed. The RMS strain deceases with increasing film thickness and it strongly influences the band gap of the flash evaporated ZnPc thin films. The optical band gap energy is found to decrease with increase in film thickness.
机译:使用原子力显微镜(AFM)分析了闪蒸的酞菁锌(ZnPc)薄膜。从图像中可以观察到晶域的均匀分布。微晶尺寸随着膜厚度的增加而增加。从透射光谱中,发现透射率随着膜厚度的增加而降低。发现ZnPc膜中的光学跃迁是直接的并且是允许的。 RMS应变随着膜厚的增加而降低,并强烈影响闪蒸ZnPc薄膜的带隙。发现光学带隙能量随着膜厚度的增加而减小。

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