Influence of the growth rate on the nanocrystallinity of Ⅱ-Ⅵ films in chemical vapor deposition

T.M. Razykov; K.M. Kouchkarov

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Influence of the growth rate on the nanocrystallinity of Ⅱ-Ⅵ films in chemical vapor deposition

机译：生长速率对化学气相沉积中Ⅱ-Ⅵ薄膜纳米结晶度的影响

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摘要

The nanocrystallinity of CdS, CdSe and CdTe films are studied as a function of the growth rate in chemical vapor deposition. The existence of a critical flux for condensing molecules and the presence of a critical substrate temperature is being established. Polycrystalline structure is formed at temperatures higher than this temperature.

机译：研究了CdS，CdSe和CdTe薄膜的纳米结晶度与化学气相沉积中生长速率的关系。正在建立用于冷凝分子的临界通量和临界衬底温度的存在。在高于该温度的温度下形成多晶结构。

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来源
《Solar Energy》 |2006年第2期|p.182-184|共3页
作者
T.M. Razykov; K.M. Kouchkarov;
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作者单位

Physical-Technical Institute, Scientific Association 'Physics-Sun', Uzbek Academy of Sciences, G. Mavlyanov Street 2B, Tashkent 700084, Uzbekistan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类太阳能技术;
关键词
thin film; chemical vapor deposition; nanocrystalline material; growth rate; critical temperature;

机译：薄膜;化学气相沉积;纳米晶材料;生长速率;临界温度;

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Influence of the growth rate on the nanocrystallinity of Ⅱ-Ⅵ films in chemical vapor deposition

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