Electrical properties of electrodeposited CdTe photovoltaic devices on metallic substrates: study using small area Au-CdTe contacts

摘要

Charge transport properties of the Schottky diodes fabricated on n-CdTe layers electrodeposited on stainless steel foil are investigated. The small area Au-CdTe contacts facilitated the investigation of the role of shunt and series resistances on the Ⅰ-Ⅴ characteristics of the thin-film CdTe device. The charge transport mechanism in these diodes is found to be generation-recombination in the depletion layer and over-barrier electron flow at low and higher bias voltages, respectively. By using this model a quantitative theoretical analysis of the current-voltage characteristics of the diodes is possible.