Properties of brush plated Cd_xZn_(1-x)Te thin films

K.R. Murali

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Properties of brush plated Cd_xZn_(1-x)Te thin films

机译：刷镀Cd_xZn_（1-x）Te薄膜的性能

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Cd_xZn_(1-x)Te (0 ≤ x ≤ 0.5) thin films were deposited for the first time by the brush plating technique using cadmium sulphate, zinc sulphate and tellurium dioxide precursors. The deposition current density was maintained at 100 mA cm~(-2). X-ray diffrac

机译：使用硫酸镉，硫酸锌和二氧化碲前体，通过刷镀技术首次沉积了Cd_xZn_（1-x）Te（0≤x≤0.5）薄膜。沉积电流密度保持在100mA cm·（-2）。 X射线衍射

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来源
《Solar Energy》 |2008年第3期|p.220-225|共6页
作者
K.R. Murali;
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作者单位

Electrochemical Materials Science Division, Central Electrochemical Research Institute, Karaikudi 630 006, India;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类太阳能技术;
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Properties of brush plated Cd_xZn_(1-x)Te thin films

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