Photoelectrochemical properties of spray deposited n-CdSe thin films

摘要

Polycrystalline cadmium selenide (CdSe) thin films have been prepared by spraying a mixture of an equimolar aqueous solutions of cadmium chloride and selenourea on preheated fluorine doped tin oxide (FTO) coated glass substrates at different substrate temperatures. The cell configuration n-CdSe/1 M (NaOH + Na_2S + S)/C is used for studying the capacitance-voltage (C-V) characteristics in dark, current-voltage (I-V) characteristics in dark and under illumination, photovoltaic power output and spectral response characteristics of the as deposited films. Photoelectrochemical study shows that as deposited CdSe thin films exhibits n-type of conductivity. The spectral response characteristics of the films at room temperature show a prominent sharp peak at 725 nm. The measured values of efficiency (η) and fill factor (FF) are found to be 0.50% and 0.44 respectively for film deposited at 300 ℃. Electrochemical impedance spec-troscopy studies show that the CdSe film deposited at 300 ℃ shows better performance in PEC cell.