Cu2ZnSnSe4 device obtained by formate chemistry for metallic precursor layer fabrication

摘要

Cu2ZnSnSe4 films were prepared by selenization of metallic precursors obtained by a new wet process involving metal formates. Cu(HCOO)(2) and Zn(HCOO)(2) were used as copper and zinc sources respectively, while tin was introduced as a methoxide.