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机译:Cu2ZnSnS4的固有缺陷和Na掺杂:密度泛函理论研究
Gen Res Inst Nonferrous Met, Beijing 100088, Peoples R China|Univ Sci & Technol Beijing, Beijing 100083, Peoples R China;
Gen Res Inst Nonferrous Met, Beijing 100088, Peoples R China;
Gen Res Inst Nonferrous Met, Beijing 100088, Peoples R China;
Gen Res Inst Nonferrous Met, Beijing 100088, Peoples R China;
Gen Res Inst Nonferrous Met, Beijing 100088, Peoples R China;
Gen Res Inst Nonferrous Met, Beijing 100088, Peoples R China;
Gen Res Inst Nonferrous Met, Beijing 100088, Peoples R China;
Gen Res Inst Nonferrous Met, Beijing 100088, Peoples R China;
CZTS; First-principles calculations; Na doping; Defect transition levels;
机译:Cu2ZnSnS4光伏电池异质界面的结构和电子性质:密度泛函理论研究
机译:混合密度泛函理论研究β-In_2S_3的本征点缺陷
机译:密度泛函理论研究重掺杂对Si本征点缺陷性质的影响及其对熔体单晶生长的影响
机译:密度函数理论计算SI中H缺陷
机译:氧化锌中的固有缺陷和钠受体掺杂。
机译:甘氨酸/甘氨酸自由基与本征/硼掺杂(80)单壁碳纳米管之间的相互作用:密度泛函理论研究
机译:mn掺杂氧化锆的结构和磁性:密度泛函理论 学习