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Chemically deposited cubic SnS thin films for solar cell applications

机译:化学沉积的立方SnS薄膜用于太阳能电池

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Cubic SnS is a promising absorber material for thin film heterojunction solar cells. In this paper, we report the fabrication of cubic SnS films by chemical bath deposition technique. The effects of bath temperature and Na2S2O3 concentration on the properties of the films were investigated. Films deposited at different bath temperatures showed a slightly Sn-rich composition. An increase in the bath temperature from 25 degrees C to 65 degrees C caused increase in the crystallite size from 17 nm to 70 nm. An increase in the bath temperature to up to 45 degrees C resulted in an improvement in the grain size, whereas a further increase in the bath temperature resulted in a slight decrease in the grain size. The band gap of the films decreased from 1.74 eV to 1.68 eV with increasing bath temperature. The films deposited from solutions on increasing the Na2S2O3 concentration showed a slight improvement in the atomic percentage of S. The films deposited with a Na2S2O3 concentration of 0.125 M showed a compact and uniform morphology with a grain size of 1 pm. With an increase in the Na2S2O3 concentration from 0.125 M to 0.175 M in the solution, the band gap of the films increased from 1.73 eV to 1.82 eV. The films exhibited p-type electrical conductivity. The films deposited with the Na2S2O3 concentration of 0.125 M showed a higher hole mobility of 75.1 cm(2) V-1 s(-1). Thus, the above results showed that a bath temperature of 45 degrees C and Na2S2O3 concentration of 0.125 M are the optimum conditions for obtaining near-stoichiometric cubic SnS films with good structural, microstructural, optical and electrical properties. (C) 2016 Elsevier Ltd. All rights reserved.
机译:立方SnS是一种有前途的薄膜异质结太阳能电池吸收材料。在本文中,我们报道了通过化学浴沉积技术制备立方SnS薄膜。研究了浴温和Na2S2O3浓度对薄膜性能的影响。在不同的浴温下沉积的膜显示出稍微富锡的组成。浴温从25℃增加到65℃导致微晶尺寸从17nm增加到70nm。浴温度升高至最高45℃导致晶粒尺寸的改善,而浴温度的进一步升高导致晶粒尺寸的略微减小。随着浴温的升高,薄膜的带隙从1.74 eV降低到1.68 eV。从溶液中沉积的膜随着Na2S2O3浓度的增加而显示出S原子百分比的轻微提高。以Na2S2O3浓度为0.125 M沉积的膜显示出致密而均匀的形貌,晶粒尺寸为1 pm。随着溶液中Na2S2O3浓度从0.125 M增加到0.175 M,薄膜的带隙从1.73 eV增加到1.82 eV。膜表现出p型导电性。 Na2S2O3浓度为0.125 M沉积的薄膜显示出更高的空穴迁移率,为75.1 cm(2)V-1 s(-1)。因此,上述结果表明,45℃的浴温和0.125M的Na 2 S 2 O 3浓度是获得具有良好的结构,微结构,光学和电性能的接近化学计量的立方SnS膜的最佳条件。 (C)2016 Elsevier Ltd.保留所有权利。

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