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Synthesis and band gap tuning in CdSe(i-x)Te(x) thin films for solar cell applications

机译:用于太阳能电池的CdSe(i-x)Te(x)薄膜的合成和带隙调谐

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摘要

Thin films of CdSe(1-x)Te(x) (x = 0 - 1) were grown on to the glass substrates by thermal evaporation method (PVD). The effect of annealing duration on the formation of single phase ternary alloys were systematically investigated. The prepared thin films were characterized by using FE-SEM, EDS and X-ray diffractometer. The X-ray diffraction studies shows that vacuum annealed films are polycrystalline in nature, and well oriented along a preferred direction of (0 0 2) for hexagonal and along (1 1 1) for cubic crystal structure. It is observed that increase in the CdTe concentration leads to change in the crystal structure from hexagonal to cubic. The absorption coefficients and optical band gaps were evaluated from spectro-metric measurements. It is observed that optical band gap can be tuned from 1.67 eV to 1.51 eV as value of x varied from 0 to 1. (C) 2017 Elsevier Ltd. All rights reserved.
机译:通过热蒸发法(PVD)在玻璃基板上生长CdSe(1-x)Te(x)(x = 0-1)薄膜。系统研究了退火时间对单相三元合金形成的影响。用FE-SEM,EDS和X射线衍射仪对制备的薄膜进行表征。 X射线衍射研究表明,真空退火膜本质上是多晶的,对于六方晶,沿(0 0 2)的首选方向取向良好,对于立方晶结构,沿(1 1 1)的取向很好。观察到,CdTe浓度的增加导致晶体结构从六方变为立方。通过光谱测量评估吸收系数和光学带隙。可以观察到,随着x的值从0变到1,光学带隙可以从1.67 eV调整到1.51 eV。(C)2017 Elsevier Ltd.保留所有权利。

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