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机译:将偏置电容调查作为监控石墨烯/硅接口的强大工具
Univ Naples Federico II Dept Elect Engn & Informat Technol Via Claudio 21 I-80125 Naples Italy;
Univ Naples Federico II Dept Elect Engn & Informat Technol Via Claudio 21 I-80125 Naples Italy;
ENEA Res Ctr Portici Ple E Fermi 1 I-80055 Naples Italy;
ENEA Res Ctr Portici Ple E Fermi 1 I-80055 Naples Italy;
ENEA Casaccia Res Ctr Via Anguillarese 301 I-00060 Rome Italy;
ENEA Casaccia Res Ctr Via Anguillarese 301 I-00060 Rome Italy;
ENEA Res Ctr Portici Ple E Fermi 1 I-80055 Naples Italy;
Univ Naples Federico II Dept Elect Engn & Informat Technol Via Claudio 21 I-80125 Naples Italy;
Capacitance-voltage; Forward bias capacitance; Graphene; silicon solar cells; Schottky solar cell; Non-uniform interface; Nitric acid doping;
机译:(AU / TI)/ Al2O3 / N-Ga-GaAs肖特基势垒二极管(SBDS)的前偏压C-V特性温度依赖性负电容研究
机译:SiO2 / Polysilicon和SiO2 / Monosiliconcon的界面态对N-Polysilicon / Oxide / N-Monosiliconcon电容的影响
机译:SiO2 / Polysilicon和SiO2 / Monosiliconcon的界面态对N-Polysilicon / Oxide / N-Monosiliconcon电容的影响
机译:在照明下向前偏置电容测量的Galnp / Ge异质结构太阳能电池的表征
机译:支持石墨烯界面的基本研究:石墨烯场效应晶体管(FET)中缺陷密度和理想石墨烯 - 硅肖丝狄克二极管
机译:石墨烯-溶液界面电容模型的分析开发和优化
机译:偏置激活负电容的动态频率依赖性 高正向偏压下的半导体二极管