Two local built-in potentials of H_2S processed CZTSSe by complex impedance spectroscopy

摘要

We have fabricated CZTSSe solar cells with H2S sulfo-selenization processes and investigated the electronic structure at the PN hetero- and back contact junctions by impedance spectroscopy. By decoupling each junction's impedance spectroscopic responses, we systematically characterized the built-in potential of two local junction interfaces. A developed equivalent circuit model has been optimized for decoupling each junction's property at different frequency bands. Modeling and numerical simulations were conducted with the in-house MATLAB modeling suites connected to external simulators of Sentaurus TCAD and LEVM/LEVMW software to estimate the impact of each junction component to impedance spectra. The optimized model is comprised of a parallel circuit combination with resistance and capacitor-like elements (constant phase elements), connected to one inductive element. The conversion efficiency of CZTSSe devices is 6.2% with bandgap energy 1.13 eV based on external quantum efficiency measurements. From the equivalent circuit model, the built-in potential of the heterojunction is characterized as 956 meV, which is similar to 3% smaller than an ideal case from TCAD, 987 meV. Conversely, the built-in potential of the back contact junction is 476 meV. The apparent built-in potential is estimated as 480 meV from the Mott-Schottky equation.