Effect of the anisotropy of etching surface morphology on light-trapping and photovoltaic conversion efficiencies of silicon solar cell

摘要

A homogeneous diamond wire sawing multicrystalline Si surface with nanoscale oval pits was obtained in an acid solution by adding NaNO2, polyethylene glycol-polyvinyl alcohol, and dodecylbenzene sulfonic acid at 12 degrees C for 130 s. The textured surface showed orientation dependence. The anisotropy of H/D caused different experimental results. The R-ave of incident light originating from the direction parallel to saw marks was 22-27% larger than that from the direction perpendicular to saw marks. The photovoltaic conversion efficiency was 0.6-0.8% higher when the thin grid line of Ag electrode was parallel to the saw marks than when in the perpendicular direction. These results indicated that using saw marks can improve the conversion efficiency of solar cells.