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首页> 外文期刊>Solar Energy >Effects of annealing temperature and cooling rate on photo-electrochemical performance of pristine polycrystalline metal-chalcogenide film electrodes
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Effects of annealing temperature and cooling rate on photo-electrochemical performance of pristine polycrystalline metal-chalcogenide film electrodes

机译:退火温度和冷却速率对原始多晶金属硫属化物膜电极的光电化学性能的影响

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摘要

Photoelectrochemical (PEC) conversion processes are recently emerging in solar energy technology. To avoid high cost and special preparation conditions, thin films of polycrystalline nano-size materials are being considered PEC-based solar energy conversions. Nano-scale metal-chalcogenide (MX where M = Cd, Cu, Zn or others; X = S, Se, or Te) based films are being widely studied in such processes. This is because metal-chalcogenide film electrodes have band gap values suitable for visible light and can be prepared by simple methods. Being in the nano-scale thickness, they demand lower starting materials and are therefore less hazardous to environment. However, with their narrow-to-medium band gap values, pristine metal-chalcogenide film electrodes are unstable to photo-corrosion under PEC conditions. They also exhibit low PEC conversion efficiency, which encourages researchers to consider multi-junction thin film systems. Such a strategy adds to the cost and undermines the virtue of simplicity of metal chalcogenide films in their pristine form. Attempts have been widely made to enhance stability and conversion efficiency of such film electrodes in their pristine forms, using simple methods. Among those attempts are controlled annealing temperatures and, to a lesser extent, controlled cooling rates. This review is devoted to study effects of annealing temperature and cooling rate on stability and performance of pristine metal chalcogenide film electrodes under PEC conditions. Basic science models, known for atomic migrations inside metal crystals, are used here to rationalize effects of annealing and cooling rate on film electrode physical properties. By modulating physical properties of semiconductor film electrodes their PEC characteristics (most notably conversion efficiency and stability) can be optimized. In this respect, generalizations based on reported literature are highlighted. Recommendations on best practice in pristine metal-chalcogenide electrode annealing temperature and cooling rate are also presented.
机译:光电技术(PEC)转换过程最近在太阳能技术中出现。为了避免高成本和特殊的制备条件,多晶纳米尺寸材料的薄膜被认为是基于PEC的太阳能转换。基于纳米级金属硫属化物(MX,其中M = Cd,Cu,Zn或其他; X = S,Se或Te)的薄膜正在这种方法中得到广泛研究。这是因为金属硫属化物膜电极具有适合可见光的带隙值,并且可以通过简单的方法来制备。它们具有纳米级的厚度,因此它们需要的起始原料较少,因此对环境的危害较小。然而,原始金属硫属化物膜电极具有窄至中等的带隙值,因此在PEC条件下对光腐蚀不稳定。它们还表现出低PEC转换效率,这鼓励研究人员考虑使用多结薄膜系统。这样的策略增加了成本,并且破坏了其原始形式的金属硫属化物膜的简单性的优点。已经尝试使用简单的方法来提高原始形式的这种膜电极的稳定性和转换效率。在这些尝试中,受控的退火温度以及较小程度的受控冷却速率。这篇综述致力于研究退火温度和冷却速率对原始金属硫属化物膜电极在PEC条件下的稳定性和性能的影响。在这里,以原子在金属晶体内部迁移而著称的基础科学模型被用于合理化退火和冷却速率对薄膜电极物理性能的影响。通过调节半导体膜电极的物理性能,可以优化其PEC特性(最显着的转换效率和稳定性)。在这方面,突出了基于文献报道的概括。还提出了关于原始金属硫属化物电极退火温度和冷却速率的最佳实践的建议。

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