Interface modification to enhance electron extraction by deposition of a ZnMgO buffer on SnO_2-coated FTO in CdTe solar cells

摘要

Achieving high open-circuit voltage (V-oc) for CdTe thin film solar cells is challenging. We report that a ZnMgO (ZMO) buffer can improve V-oc and the performance of CdTe solar cells when deposited on the tin oxide (SnO2 or TO) coated fluorine-doped tin oxide (FTO) substrates. The TO/ZMO bilayer buffer brings a better energy band matching at the front contact of CdTe thin film solar cells, which can reduce interface carrier recombination and facilitate electron extraction. Our best-performing CdTe solar cell using the TO/ZMO bilayer buffer has achieved a power conversion efficiency of 16.76%, with an open-circuit voltage of 838.75 mV, a short-circuit current density of 27.32 mA cm(-2) , and a fill factor of 73.14%, much higher than those of devices based on TO buffer. Our results suggest that a careful interface modification of front contact layers provides a simple and effective route to further improving the performance of CdTe solar cells with a higher V-oc .