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首页> 外文期刊>Semiconductor science and technology >Theoretical studies on a TeO_2/ZnO/diamond-layered structure for zero TCD SAW devices
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Theoretical studies on a TeO_2/ZnO/diamond-layered structure for zero TCD SAW devices

机译:零TCD声表面波器件的TeO_2 / ZnO /金刚石层状结构的理论研究

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摘要

High-frequency surface acoustic wave (SAW) devices based on diamond substrate are useful because of their very high SAW velocity. In the present work, SAW propagation characteristics, such as phase velocity, coupling coefficient and temperature coefficient of delay (TCD) of a TeO_2/ZnO/diamond-layered structure, are examined using theoretical calculations. The ZnO/diamond bi-layer structure is found to exhibit a high positive TCD value. A zero TCD device structure is obtained after integration with a TeO_2 over layer having a negative TCD value. Introduction of a non-piezoelectric TeO_2 over layer on the bi-layer structure (ZnO/diamond) increases the coupling coefficient. A relatively low thickness of TeO_2 thin film (~(1.6-3.1) × 10~(-3)λ) is required to achieve temperature-stable SAW devices based on diamond.
机译:基于金刚石基底的高频表面声波(SAW)装置非常有用,因为它们的声表面波速度非常高。在目前的工作中,使用理论计算方法研究了TeO_2 / ZnO /金刚石层状结构的相速度,耦合系数和延迟温度系数(TCD)等声表面波传播特性。发现ZnO /金刚石双层结构表现出高的正TCD值。与具有负TCD值的TeO_2上层集成后,将获得零TCD器件结构。在双层结构(ZnO /金刚石)上引入非压电TeO_2覆盖层会增加耦合系数。为了实现基于金刚石的温度稳定的声表面波器件,需要相对低的厚度的TeO_2薄膜(〜(1.6-3.1)×10〜(-3)λ)。

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