Amorphous silicon has traditionally been represented by a continuous random network model in which there is no long-range ordering for the atoms, and some have less than fourfold coordination, which form dangling bonds-a type of defect. Treacy and Borisenko (p. 950; see the Perspective by Gibson) used fluctuation electron microscopy to explain that models including regions of crystalline order are needed to fit the observed local variations in structure.
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