Applications of Secondary Electron Composition Contrast Imaging Method in Microstructure Studies on Heterojeunction Semiconductor Devices and Multilayer Materials

摘要

The principle, imaging condition and experimental method for obtaining high resolution composition contrast in secondary electron image were described. A new technique of specimen preparation for secondary electron composition contest observation was introduced and discussed. By using multilayer P~+-Si_1-xGe_x/p-Si heterojunciton internal photoemission infrared detector as an example, the applications of secondary electron composition contrast imaging in microstructure studies on heterojunciton semiconducting materials and devices were stated. The characteristics of the image were compared with the ordinary transmission electron diffraction contrast image. The prospects of applications of the imaging method in heterojunction semiconductor devices and multilayer materials are also discussed.