Study on ZnO: Al (ZAO) films by DC reaction magnetron sputtering

摘要

The high quality ZnO: Al films were successfully produced by DC reaction magnetron sputtering technology. The Al-doping effect on electrical and optical properties and its scattering mechanism are discussed in detail. The analyses of X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS) and high resolution Auger electron spectroscopy (AES) show that Al_2O_3 could be effectively removed by controlling oxygen flow and al-doping concentration during deposition of ZnO: Al films.