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机译:垂直注入基于GaN的绿色发光二极管的自动分离激光剥离技术
$^{1}$ Laboratory of Micro/Nano Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, China;
Laboratory of Micro/Nano Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, China;
$^{3}$ Department of Mathematics and Physics, Xiamen University of Technology, Xiamen, China;
Laboratory of Micro/Nano Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, China;
Laboratory of Micro/Nano Optoelectronics, Department of Electronic Engineering, Xiamen University, Xiamen, China;
Pen-Tung Sah Institute of Micro-Nano Science and technology, Xiamen University, Xiamen, China;
Light emitting diodes; Gallium nitride; Films; Fabrication; Substrates; Surface emitting lasers;
机译:使用自动分流激光剥离技术制造垂直结构的GaN基发光二极管
机译:激光剥离和刻蚀技术形成的GaN基发光二极管中的微腔效应
机译:激光源对激光剥离GaN基发光二极管反向偏置泄漏的影响
机译:具有选择性镍电镀和图案激光剥离技术的高功率垂直GaN的发光二极管的制造
机译:利用外延剥离技术开发热电冷却的IV-VI半导体二极管激光器。
机译:梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
机译:用于GaN基垂直注入发光二极管光束整形的自组装二维表面结构
机译:基于宽带隙II-VImaterials的蓝绿色发光二极管和激光器