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机译:击穿温度系数小的InGaAs / AlAsSb雪崩光电二极管
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, U.K.;
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, U.K.;
Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, U.K.;
Temperature measurement; Temperature dependence; Indium gallium arsenide; Current measurement; Dark current; Tunneling; Electric breakdown;
机译:InP / InGaAs雪崩光电二极管分别吸收,分级,充电和倍增时击穿电压的温度依赖性
机译:AlAsSb雪崩光电二极管雪崩增益的高温和波长依赖性
机译:InP-InGaAs SAGCM对峙雪崩光电二极管内雪崩击穿的数值模拟
机译:AlAsSb薄雪崩区具有低于mV / K的击穿电压温度系数和非常低的过量噪声因子
机译:异质结雪崩光电二极管的建模和优化:噪声,速度和击穿。
机译:InGaAs / InAlAs单光子雪崩光电二极管的理论分析
机译:具有小的温度系数击穿的InGaas / alassb雪崩光电二极管