Effect of Quantum Barrier Thickness in the Multiple-Quantum-Well Active Region of GaInN/GaN Light-Emitting Diodes

摘要

The dependence of the polarization-induced electric field in GaInN/GaN multiple-quantum-well light-emitting diodes (LEDs) on the GaN quantum barrier (QB) thickness is investigated. Electrostatic arguments and simulations predict that a thin QB thickness reduces the electric field in the quantum wells (QWs) and also improves the LED efficiency. We experimentally demonstrate that the QW electric field decreases with decreasing QB thickness. The lower electric field results in a better overlap of electron and hole wave functions and better carrier confinement in the QWs. A reduced efficiency droop and enhanced internal quantum efficiency is demonstrated for GaInN/GaN LEDs when the QB thickness is reduced from 24.5 to 9.1 nm.