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首页> 外文期刊>Optical Materials >Luminescence of Sr_2MgSi_2O_(7-1.5x)N_x:Eu~(2+) ,Dy~(3+) phosphors with long-afterglow properties for white LEDs
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Luminescence of Sr_2MgSi_2O_(7-1.5x)N_x:Eu~(2+) ,Dy~(3+) phosphors with long-afterglow properties for white LEDs

机译:具有长余辉特性的Sr_2MgSi_2O_(7-1.5x)N_x:Eu〜(2+),Dy〜(3+)荧光粉的发光特性

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摘要

To develop long-afterglow luminescent materials for white LEDs application, a series of Sr1.97MgSi2O7-1.5xNx:0.01Eu(2+),0.02Dy(3+) (0 = x = 0.49) phosphors were designed. The single-phase samples were confirmed and the introduction of N was verified by the XRD patterns and energy-dispersive X-ray spectrum. The average particle size of the phosphors was determined to be about 4.9 mu m. When the N is doped, it has been found the Eu2+ emission intensity decreases gradually, which could be owing to the increasing crystal defects by the nonequivalent substitution between N and O. The excitation spectra reveal that the broad and strong excitation bands from 240 to 450 nm can well match the LED chip. It is interesting that the incorporation of N can improve the afterglow time, which has been interpreted by the thermoluminescence curves. The investigation of the temperature-dependent luminescence indicates a beneficial effect on the thermal stability by doping N in the phosphors.
机译:为了开发用于白色LED的长余辉发光材料,设计了一系列Sr1.97MgSi2O7-1.5xNx:0.01Eu(2 +),0.02Dy(3+)(0 <= x <= 0.49)荧光粉。确认了单相样品,并通过XRD图谱和能量色散X射线光谱验证了N的引入。磷光体的平均粒径确定为约4.9μm。掺杂N后,发现Eu2 +的发射强度逐渐降低,这可能是由于N和O之间的不等价取代导致晶体缺陷增加所致。激发光谱表明,从240到450的宽而强的激发带nm可以很好地匹配LED芯片。有趣的是,氮的掺入可以改善余辉时间,这已经由热致发光曲线解释了。对与温度有关的发光的研究表明,通过在磷光体中掺入N对热稳定性具有有益的作用。

著录项

  • 来源
    《Optical Materials》 |2019年第2期|333-338|共6页
  • 作者单位

    Huaiyin Normal Univ, Phys Dept, 111 West Chang Jiang Rd, Huaian 223300, Peoples R China|Huaiyin Normal Univ, Jiangsu Key Lab Modern Measurement Technol & Inte, 111 West Chang Jiang Rd, Huaian 223300, Peoples R China|Huaiyin Normal Univ, Jiangsu Key Lab Chem Low Dimens Mat, 111 West Chang Jiang Rd, Huaian 223300, Peoples R China;

    Huaiyin Normal Univ, Phys Dept, 111 West Chang Jiang Rd, Huaian 223300, Peoples R China|Huaiyin Normal Univ, Jiangsu Key Lab Modern Measurement Technol & Inte, 111 West Chang Jiang Rd, Huaian 223300, Peoples R China|Huaiyin Normal Univ, Jiangsu Key Lab Chem Low Dimens Mat, 111 West Chang Jiang Rd, Huaian 223300, Peoples R China;

    Huaiyin Normal Univ, Phys Dept, 111 West Chang Jiang Rd, Huaian 223300, Peoples R China|Huaiyin Normal Univ, Jiangsu Key Lab Modern Measurement Technol & Inte, 111 West Chang Jiang Rd, Huaian 223300, Peoples R China;

    Huaiyin Normal Univ, Phys Dept, 111 West Chang Jiang Rd, Huaian 223300, Peoples R China|Huaiyin Normal Univ, Jiangsu Key Lab Modern Measurement Technol & Inte, 111 West Chang Jiang Rd, Huaian 223300, Peoples R China|Huaiyin Normal Univ, Jiangsu Key Lab Chem Low Dimens Mat, 111 West Chang Jiang Rd, Huaian 223300, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Phosphors; Long-afterglow; Luminescence; LEDs;

    机译:荧光粉;长余辉;发光;LED;

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