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Electronic optical, properties and widening band gap of graphene with Ge doping

机译:锗掺杂石墨烯的电子光学,性质和加宽带隙

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摘要

The Density Functional Theory with full potential linearized augmented plane wave uses to study the pure graphene and doped with different amounts of Germanium (5.55, 8.33, and 12.5%). It uses also Generalized Gradient Approximation and Tran-Blaha modified Becke-Johnson formalism to investigate their electronic and optical properties. Furthermore, it utilizes Germanium is able to open band gap due to the p-states of Ge, which are in hybridization with p-states of Carbon. Germanium concentration decreasing or increasing can control the band gap opening of graphene system. The optical absorption increases in the ultraviolet range, due to the important absorption that contains germanium above 150 nm.
机译:具有全部潜在线性化增强平面波的密度泛函理论用于研究纯石墨烯并掺杂了不同量的锗(5.55、8.33和12.5%)。它还使用广义梯度逼近和Tran-Blaha修改的Becke-Johnson形式主义来研究其电子和光学特性。此外,由于锗的p态与碳的p态杂化,它利用锗能够打开带隙。锗浓度的降低或升高可以控制石墨烯体系的带隙开口。由于包含150 nm以上的锗的重要吸收,因此紫外范围内的光吸收增加。

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